The self-developed SiC MOSFET has the advantages of high switching frequency, low Rds(on), high block voltage, excellent high temperature characteristics, low switching loss and high reliability.
The self-developed SiC MOSFET has the advantages of high switching frequency, low Rds(on), high block voltage, excellent high temperature characteristics, low switching loss and high reliability.
Compared with normal PN junction barrier diodes, silicon carbide Schottky diodes have the advantages of reduced VF, fast switching speed, strong inrush current , zero reverse recovery, high avalanche …
Compared with normal PN junction barrier diodes, silicon carbide Schottky diodes have the advantages of reduced VF, fast switching speed, strong inrush current , zero reverse recovery, high avalanche …
Compared with normal PN junction barrier diodes, silicon carbide Schottky diodes have the advantages of reduced VF, fast switching speed, strong inrush current , zero reverse recovery, high avalanche …
Compared with normal PN junction barrier diodes, silicon carbide Schottky diodes have the advantages of reduced VF, fast switching speed, strong inrush current , zero reverse recovery, high avalanche …
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